This paper analyses the numerical simulation problems of the semiconductor devices deeply . a one dimensional pn junction diode is worked out satisfyingly by the recursive method with the matlab5 . 3 software 论文深入的分析了半导体器件的数值模拟问题，利用matlab5 . 3等计算机工具，用解三对角矩阵方程的递归算法，实现了pn结二极管的一维求解，取得了比较满意的结果。
It also put forward that how to select appropriate epilayer doping concentration and thickness , pn junction depth and jte technology to increase the breakdown voltage of 4h - sic mps . a power dissipation model of 4h - sic mps was established 通过对4h - sicmps击穿特性的二维模拟，提出如何选择合适的pn结深度、外延层掺杂浓度和厚度以及如何运用jte终端技术来提高击穿电压。
In the design of the device , a kind of junction termination technology , polysilicon field plate was introduced at the edge of source and drain of the device . it reduced the electric field of pn junction and nn + at the surface to avoid breakdown at the two points 在器件设计过程中,在源端和漏端都采用了多晶场板技术,减小了表面pn结和nn +处的峰值电场,避免了器件在这两处过早击穿。
Schottky barrier diode is a kind of majority carrier device , using the contact barrier formed between metal and semiconductor to work . it has the advantages of low turn - on voltage and high response frequency , compared with pn junction diodes 肖特基二极管是利用金属与半导体之间接触势垒进行工作的一种多数载流子器件，与普通的pn结二极管相比，它具有正向导通电压低，响应速度快等优良特性。
The brief research in this dissertation is twofold : one is the monitoring of the corrosion of reinforced bar in concrete by using the compression sensibility of smart concrete ; the other is the prevention of the corrosion of reinforced bar by using the smart concrete pn junctions 本文的主要工作分为两部分：一部分是用机敏混凝土的压敏性进行钢筋混凝土结构中钢筋锈蚀监测：另一部分是用机敏混凝土pn结进行钢筋锈蚀防护。
Based on this model , it was presented that how to select the thickness of epilayer , the doping concentration of epilayer , schottky contact , the width of pn grid , the depth of pn junction and the doping concentration of pn junction for the trade - off between forward and reverse characteristics 基于此模型，提出在对正反向特性进行折衷时，如何选择合适的外延层掺杂浓度和厚度、肖特基接触和pn结网格宽度、 pn结深度和掺杂浓度。
The degradation of the electrical characteristics in sic pn junctions irradiated by neutron is attributed to the recombination centers and the electric field effect on the thermal emission of traps within the depletion region . the relationship of the ideality factor to the applied voltage is theoretically studied 提出了中子辐照下sicpn结电特性退化的新的理论， pn结耗尽区中的辐照陷阶在耗尽区电场的作用下热发射效应得到加强，从而导致pn结正偏和反偏时的复合电流和产生电流的改变。
At the initial stage of planar technique , b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region , and the good shield effect of sio2 film to b . but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient , the linear slowly - changed distribution of acceptor b in pn junction can not be formed , which could not cater to the requirement of high - reversal - voltage devics . thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed , while the former can lead to relatively large the base - region deviation and abruptly varied region in si , which caused severe decentralization of current amplification parameter , bad thermal stability and high tr ; the latter needed the relatively difficult pack technique , with poor repeatability , high rejection ratio , and poor diffusion quality and productio n efficiency 在平面工艺初期，由于b在硅中的固溶度、扩散系数与n型发射区的磷相匹配， sio _ 2对其又有良好的掩蔽作用，早被选为npn硅平面器件的理想基区扩散源，但b在硅中的固溶度大( 1000时达到5 10 ~ ( 20 ) ，扩散系数小， b在硅中的杂质分布不易形成pn结中杂质的线性缓变分布，导致器件不能满足高反压的要求，随之又出现了硼铝涂层扩散工艺和闭管扩镓工艺，前者会引起较大的基区偏差，杂质在硅内存在突变区域，导致放大系数分散严重，下降时间t _ f值较高，热稳定性差；后者需要难度较大的真空封管技术，工艺重复性差，报废率高，在扩散质量、生产效率诸方面均不能令人满意。
Discussion is made on photocurrent output , injection current output and zero current output for photoreceiving pn junction by means of i - v equation of photoreceiving pn junction . further survey is carried out on physical elements of the injection photodetector followed by description of some experiment subjects 本文推导金属球的雷达散射截面,同时讨论金属球散射的三个区域,金属球本身是一个良好的雷达目标,同时又是测量目标雷达截面的参考标准,因此还研究了金属球的尺寸、导电性能和球壳的厚度,给出了测量结果
A novel method for reducing the substrate - rated losses of integrated spiral inductors is presented . the method is that directly forming pn junction isolation in the si substrate to block the eddy currents induced by spiral inductors . the substrate pn junction can be realized in standard silicon technologies without additional processing steps 提出了一种新的方法来减小硅衬底损耗提高集成电感的q值：在硅衬底形成间隔的pn结隔离以阻止涡流减少损耗，这种方法工艺简单且与常规硅集成电路工艺兼容。
